Photoresists: Characteristics
Resolution, dose and roughness: how fabs judge a resist
What this tab covers The physical and chemical properties that set its grade, price and uses, with the commercial grades and the standards that define them.Resists are judged on resolution, sensitivity (dose), line-edge roughness and defect levels, and on etch resistance. Metal and particle contamination must be extremely low. Small formulation changes require full requalification.
Properties that matter commercially
| Property | Value / specification | Why it matters | Source |
|---|---|---|---|
| Exposure wavelength | g-line 436 nm, i-line 365 nm, KrF 248 nm, ArF 193 nm, EUV 13.5 nm | Each scanner generation needs matching chemistry | standard values |
| Tone | positive tone 71.51% of 2025 value | Sets which areas remain after development | Mordor via GII (2026) |
| Metal impurities | ppb or lower (indicative) | Contamination causes defects | Indicative |
Commercial grades
- g-line and i-line novolac
- KrF chemically amplified (incl. thick-film for 3D NAND)
- ArF dry
- ArF immersion
- EUV chemically amplified
- EUV metal-oxide and dry resists
- Packaging and display resists